| Part No.： | AD8512-EP |
| Page： | 7 Pages |
| Size： | 177 KB |
| Manufacturer： | Analog Devices, Inc. |
| Logo： |  |
| Views： | 1 |
| Update Time： | 2024-12-27 11:03:22 |
| DataSheet： | Download |
| Part No. | Packing | SPQ | Marking | MSL | Pins | Temp Range | Package Description | Buy |
| AD8512TRZ-EP | Tube | 98 | DNL | 1 | 8 | -55°C ~ 125°C | 8-Lead SOIC | |
| AD8512TRZ-EP-R7 | Reel | 1000 | DNL | 1 | 8 | -55°C ~ 125°C | 8-Lead SOIC |
The AD8512-EP is a dual-precision JFET amplifier that features low offset voltage, input bias current, input voltage noise, and input current noise.
The combination of low offsets, low noise, and very low input bias currents makes these amplifiers especially suitable for high impedance sensor amplification and precise current measurements using shunts. The combination of dc precision,low noise, and fast settling time results in superior accuracy in flight instruments, electronic measurement, and aviation equipment. Unlike many competitive amplifiers, the AD8512-EP maintains its fast settling performance even with substantial capacitive loads. Unlike many older JFET amplifiers, the AD8512-EP does not suffer from output phase reversal when input voltages exceed the maximum common-mode voltage range.
Fast slew rate and great stability with capacitive loads make the AD8512-EP suitable for high performance filters. Low input bias currents, low offset, and low noise result in a wide dynamic range of photodiode amplifier circuits. Low noise and distortion,high output current, and excellent speed make the AD8512-EP a great choice for military communication applications.
The AD8512-EP is available in an 8-lead narrow SOIC_N package.The AD8512-EP is specified over a military temperature range of −55°C to +125°C. Additional application and technical information can be found in the AD8512 data sheet.
